Gate Drive.md
Driver


for prototyping use a higher current driver. after you found gate drive resistors that make you happy you can
eventually
downgrade the driver IC to a cheaper model
a driver IC with programmamble dead-time


Gate drive resistor

<![CDATA[]]>https://electronics.stackexchange.com/questions/60427/calculating-the-pu...<![CDATA[]]>=

PCB


10 nH/cm
STP110N8F6_V2:  Ldrain= 1nH ,Lsource=2nH and Lgate=2.5nH


parallel fets:
-put resistors close to driver for reduced parasitic inductivity TODO spice

<![CDATA[]]>https://resources.altium.com/p/stripline-vs-microstrip-understanding-the...<![CDATA[]]>

<![CDATA[]]>https://www.analog-praxis.de/abschaetzung-der-induktivitaet-von-leiterba...<![CDATA[]]>

<![CDATA[]]>https://www.semanticscholar.org/paper/Driver-Requirement-for-Power-MOSFE...<![CDATA[]]>

Driver IC

for prototyping, use a chip with programmable dead-time

<![CDATA[]]>digikey search<![CDATA[]]>, 2ch, output peak current >2A,
sort by ascending price




  
mfr
  
mpn
  
package
  
I
  
DT
  
isolation
  





  
infineon
  
IRS2184
  
SOIC-8
  
1.9
  
500ns
  
funct
  



  

  
2ED2182
  
SOIC-8
  
2.5
  
400ns
  
funct
  



  

  
IRS21867S
  
SOIC-8
  
4
  
-
  
funct
  



  

  
2EDL8124G
  
PG-VDSON-8-4
  
4
  
STP
  
funct
  



  

  
2ED2748S01G
  
VSON-10
  
4
  
30ns
  
funct
  



  

  
2ED3144MC12L
  
6
  
6
  
prog
  

  
2.44 €


  

  
2EDB7259K
  
13-LGA
  
5/9
  
prog
  
galvanic
  



  

  
2EDS8265H
  

  

  

  

  



  

  
2EDB8259F
  
SOIC-16
  
5/9
  
prog
  
funct
  
for GaN


  

  
LM5100A
  
SOIC-8
  
3
  
-
  

  



  

  

  

  

  

  

  



  
ti
  
UCC21330BQDRQ1
  
SOIC-16
  
4/6
  
prog
  

  
1.43 €


  

  
lm5107
  

  
1.4/1.3
  

  
100V
  
1.3$




2EDB8259Y
2EDR8259X

2EDB8259E

UCC21330BQDRQ1 is a pick:


cheap
universal: halfbridge, dual high
programmable DT
LO/HI/SD inputs
9ns rise/fall time
4 A peak source current






onsemi NCP5183

Bootstrap Diode

Selection:


high voltage (>=1.5x of DC-Link)
fast recovery
maybe SiC Schottky
low forward voltage
low junction capacitance → low reverse recovery → low grounding noise bounce (negative GND voltage)





  
MPN
  
Px
  
V_max
  
I
  
Vf_max25
  
Qc
  
C(Vr=0)
  
trr
  
notes




  
<![CDATA[]]>1N4148<![CDATA[]]>
  
0.1€
  
100V
  
0.3A
  
1.25V
  

  
2pF
  
4ns
  
General Purpose


  
<![CDATA[]]>C4D02120E<![CDATA[]]>
  
1.0€
  
1200V
  
10A
  
1.8V
  
11nC
  
167pF
  
0
  
SiC, UCC21330x PDF


  
<![CDATA[]]>MURS140<![CDATA[]]>
  
0.12€
  
400V
  
1A
  
1.25V
  

  
50pF
  
50ns
  



  
<![CDATA[]]>SS310<![CDATA[]]>
  
0.14€
  
100V
  
3A
  
0.85V
  

  
120pF
  
0
  
Schottky




Gate Discharge Diodes (Turn-Off Diode)

<![CDATA[]]>TI: Fundamentals of MOSFET and IGBT Gate Driver Circuits<![CDATA[]]>


Vg_th should be less than Vfwd of the diode
small resistance
small parasitic capacitance
schottky preferred (no reverse recovery)






  
MPN
  
Vr
  
I
  
Ipeak
  
Vf
  
C(4V)
  
trr
  
Px(100)
  
notes




  
MSS1P4
  

  
1A
  
25A
  
0.41
  
50pF
  

  
0.07€
  
schottky


  
B540C
  

  
5A
  
100A
  

  
300pF
  

  
0.2€
  
schottky


  
SS310
  

  
3A
  
75A
  

  
85pF
  

  

  
100V


  
SS315
  

  
3A
  
75A
  

  
55pF
  

  

  
150V


  
1N4148
  

  

  

  

  

  

  

  



  
BAS40
  

  

  

  

  

  

  

  



  
RB160MM-40TR
  

  
1A
  
30A
  

  
90pF
  
12ns
  
0.14€
  
<![CDATA[]]>pdf<![CDATA[]]>


  
BAS3010B
  

  
1
  
3.5A
  

  
33pF
  

  
0.16€
  



  
BAS100CS
  
100V
  
0.5A
  

  

  

  

  
0.09€
  
from RAA211803 datasheet


  

  

  

  

  

  

  

  

  



  

  

  

  

  

  

  

  

  



  

  

  

  

  

  

  

  

  





1A



TI: Fundamentals of MOSFET and IGBT Gate Driver
Circuits <![CDATA[]]>https://www.ti.com/lit/ml/slua618a/slua618a.pdf?ts=1691532999585<![CDATA[]]>