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transistor-fet.lbr<?xml version="1.0" encoding="utf-8"?> <!DOCTYPE eagle SYSTEM "eagle.dtd"> <eagle version="6.0"> <drawing> <settings> <setting alwaysvectorfont="no"/> <setting verticaltext="up"/> </settings> <grid distance="0.1" unitdist="inch" unit="inch" style="lines" multiple="1" display="yes" altdistance="0.01" altunitdist="inch" altunit="inch"/> <layers> <layer number="1" name="Top" color="4" fill="1" visible="yes" active="yes"/> <layer number="2" name="Route2" color="1" fill="3" visible="yes" active="yes"/> <layer number="3" name="Route3" color="4" fill="3" visible="yes" active="yes"/> <layer number="4" name="Route4" color="1" fill="4" visible="yes" active="yes"/> <layer number="5" name="Route5" color="4" fill="4" visible="yes" active="yes"/> <layer number="6" name="Route6" color="1" fill="8" visible="yes" active="yes"/> <layer number="7" name="Route7" color="4" fill="8" visible="yes" active="yes"/> <layer number="8" name="Route8" color="1" fill="2" visible="yes" active="yes"/> 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color="6" fill="3" visible="yes" active="yes"/> <layer number="34" name="bFinish" color="6" fill="6" visible="yes" active="yes"/> <layer number="35" name="tGlue" color="7" fill="4" visible="yes" active="yes"/> <layer number="36" name="bGlue" color="7" fill="5" visible="yes" active="yes"/> <layer number="37" name="tTest" color="7" fill="1" visible="yes" active="yes"/> <layer number="38" name="bTest" color="7" fill="1" visible="yes" active="yes"/> <layer number="39" name="tKeepout" color="4" fill="11" visible="yes" active="yes"/> <layer number="40" name="bKeepout" color="1" fill="11" visible="yes" active="yes"/> <layer number="41" name="tRestrict" color="4" fill="10" visible="yes" active="yes"/> <layer number="42" name="bRestrict" color="1" fill="10" visible="yes" active="yes"/> <layer number="43" name="vRestrict" color="2" fill="10" visible="yes" active="yes"/> <layer number="44" name="Drills" color="7" fill="1" visible="yes" active="yes"/> <layer number="45" name="Holes" color="7" fill="1" visible="yes" active="yes"/> <layer number="46" name="Milling" color="3" fill="1" visible="yes" active="yes"/> <layer number="47" name="Measures" color="7" fill="1" visible="yes" active="yes"/> <layer number="48" name="Document" color="7" fill="1" visible="yes" active="yes"/> <layer number="49" name="Reference" color="7" fill="1" visible="yes" active="yes"/> <layer number="51" name="tDocu" color="7" fill="1" visible="yes" active="yes"/> <layer number="52" name="bDocu" color="7" fill="1" visible="yes" active="yes"/> <layer number="91" name="Nets" color="2" fill="1" visible="yes" active="yes"/> <layer number="92" name="Busses" color="1" fill="1" visible="yes" active="yes"/> <layer number="93" name="Pins" color="2" fill="1" visible="yes" active="yes"/> <layer number="94" name="Symbols" color="4" fill="1" visible="yes" active="yes"/> <layer number="95" name="Names" color="7" fill="1" visible="yes" active="yes"/> <layer number="96" name="Values" color="7" fill="1" visible="yes" active="yes"/> <layer number="97" name="Info" color="7" fill="1" visible="yes" active="yes"/> <layer number="98" name="Guide" color="6" fill="1" visible="yes" active="yes"/> </layers> <library> <description><b>Field Effect Transistors</b><p> <author>Created by librarian@cadsoft.de</author><p> <p> Symbols changed according to IEC617<p> All types, packages and assignment to symbols and pins checked<p> Package outlines partly checked<p> <p> JFET = junction FET<p> IGBT-x = insulated gate bipolar transistor<p> x=N: NPN; x=P: PNP<p> IGFET-mc-nnn; (IGFET=insulated gate field effect transistor)<P> m=D: depletion mode (Verdr&auml;ngungstyp)<p> m=E: enhancement mode (Anreicherungstyp)<p> c: N=N-channel; P=P-Channel<p> GDSB: gate, drain, source, bulk<p> <p> by R. Vogg 15.March.2002</description> <packages> <package name="TO92-"> <description><b>TO 92 pad in line</b></description> <wire x1="-2.0945" y1="-1.651" x2="2.0945" y2="-1.651" width="0.127" layer="21"/> <wire x1="-2.413" y1="1.1359" x2="2.413" y2="1.1359" width="0.127" layer="21" curve="-129.583"/> <wire x1="1.1359" y1="-0.127" x2="-1.1359" y2="-0.127" width="0.127" layer="51"/> <wire x1="-2.413" y1="1.1359" x2="-2.664" y2="-0.127" width="0.127" layer="51" curve="27.9376"/> <wire x1="-2.664" y1="-0.127" x2="-2.413" y2="-1.1359" width="0.127" layer="51" curve="22.4788"/> <wire x1="-1.4041" y1="-0.127" x2="-2.664" y2="-0.127" width="0.127" layer="51"/> <wire x1="-2.413" y1="-1.1359" x2="-2.0945" y2="-1.651" width="0.127" layer="21" curve="13.0385"/> <wire x1="-1.1359" y1="-0.127" x2="-1.4041" y2="-0.127" width="0.127" layer="21"/> <wire x1="2.413" y1="-1.1359" x2="2.664" y2="-0.127" width="0.127" layer="51" curve="22.4788"/> <wire x1="2.664" y1="-0.127" x2="2.413" y2="1.1359" width="0.127" layer="51" curve="27.9376"/> <wire x1="2.664" y1="-0.127" x2="1.4041" y2="-0.127" width="0.127" layer="51"/> <wire x1="1.4041" y1="-0.127" x2="1.1359" y2="-0.127" width="0.127" layer="21"/> <wire x1="2.0945" y1="-1.651" x2="2.4242" y2="-1.1118" width="0.127" layer="21" curve="13.6094"/> <pad name="3" x="-2.54" y="0" drill="0.8128" shape="long" rot="R90"/> <pad name="1" x="2.54" y="0" drill="0.8128" shape="long" rot="R90"/> <pad name="2" x="0" y="0" drill="0.8128" shape="long" rot="R90"/> <text x="-2.54" y="3.048" size="1.27" layer="25" ratio="10">>NAME</text> <text x="-2.54" y="-3.302" size="1.27" layer="27" ratio="10">>VALUE</text> </package> <package name="TO92L"> <description><b>TO 92, long pads 5.08 mm</b></description> <wire x1="-1.1359" y1="2.413" x2="-0.127" y2="2.664" width="0.127" layer="51" curve="-22.4788"/> <wire x1="-0.127" y1="2.664" x2="1.1359" y2="2.413" width="0.127" layer="51" curve="-27.9376"/> <wire x1="-1.1359" y1="-2.413" x2="-0.127" y2="-2.664" width="0.127" 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</package> <package name="SSOT6"> <description><b>SuperSOT-6</b><p> Source: Fairchild Semiconductor International ssot6_dim.pdf<br> September 1998, Rev. 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<description><b>N-Channel Enhancement MOSFET</b> 100V; 32A; 0,060Ohm</description> <gates> <gate name="A" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO3"> <connects> <connect gate="A" pin="D" pad="3 4" route="any"/> <connect gate="A" pin="G" pad="2"/> <connect gate="A" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BUZ36" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 200V; 22A; 0,12Ohm</description> <gates> <gate name="A" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO3"> <connects> <connect gate="A" pin="D" pad="3 4" route="any"/> <connect gate="A" pin="G" pad="2"/> <connect gate="A" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BUZ71" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 50V; 14A; 0,1Ohm</description> 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gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> <device name="V" package="TO218V"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BUZ347" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 50V; 40A; 0,030Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TOP3"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BUZ382" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 400V; 12,5A; 0,4Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TOP3"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BUZ172" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> -100V; -5A; 0,8Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BUZ171" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> -50V; 7A; 0,4Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> 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pad="2"/> <connect gate="A" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BUZ60" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 400V; 5,5A; 1,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BUZ50A" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 1000V; 2,5A; 5,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology 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prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> -200V; -0,15A; 11Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BSS295" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> not checked</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BSS296" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> not checked</description> <gates> 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package="TO92"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="IRF540" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> (HEXFET); 100V; 28A; 0,077Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="IRF510" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> (HEXFET); 100V; 5,6A; 0,54Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="IRF620" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> (HEXFET); 200V; 5,2A; 0,8Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="IRF840" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> (HEXFET); 500V; 8A; 0,85Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="IRF330" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 400V; 5,9A; 1,0Ohm (=BUZ63)</description> <gates> <gate name="A" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO3"> <connects> <connect gate="A" pin="D" pad="3 4" route="any"/> <connect gate="A" pin="G" pad="2"/> <connect gate="A" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="IRF350" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b><p> (HEXFET); 400V; 0.3 Ohm; 14A</description> <gates> <gate name="A" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO3"> <connects> <connect gate="A" pin="D" pad="3 4" route="any"/> <connect gate="A" pin="G" pad="2"/> <connect gate="A" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2N3819" prefix="Q"> <description><b>N-Channel Junction FET</b></description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2N3820" prefix="Q"> <description><b>P-Channel Junction FET</b><p> Source: http://www.fairchildsemi.com/ds/2N/2N3820.pdf</description> <gates> <gate name="G$1" symbol="JFET-P" x="0" y="0"/> </gates> <devices> <device name="" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2N5116" prefix="Q"> <description><b>P-Channel Junction FET</b><p> Source: Vishay 70260.pdf</description> <gates> <gate name="G$1" symbol="JFET-P" x="0" y="0"/> </gates> <devices> <device name="" package="TO18"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BF247" prefix="Q"> <description><b>N-Channel Junction FET</b></description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BF256" prefix="Q"> <description><b>N-Channel Junction FET</b></description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BF245" prefix="Q"> <description><b>N-Channel Junction FET</b><p> http://www.onsemi.com/pub/Collateral/BF245A-D.PDF</description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BFT10" prefix="Q"> <description><b>N-Channel Junction FET</b></description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BFT11" prefix="Q"> <description><b>P-Channel Junction FET</b><p></description> <gates> <gate name="G$1" symbol="JFET-P" x="0" y="0"/> </gates> <devices> <device name="" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2N4221" prefix="Q"> <description><b>N-Channel Junction FET</b></description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO72"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2N4392" prefix="Q"> <description><b>N-Channel Junction FET</b></description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO18"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2N4857" prefix="Q"> <description><b>N-Channel Junction FET</b></description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO18"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="IRFD9210" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b></description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="DIL04"> <connects> <connect gate="G$1" pin="D" pad="3 4"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SD211" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b></description> <gates> <gate name="G$1" symbol="IGFET-EN-GDSB" x="0" y="0"/> </gates> <devices> <device name="" package="TO72"> <connects> <connect gate="G$1" pin="B" pad="4"/> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SD215" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b></description> <gates> <gate name="G$1" symbol="IGFET-EN-GDSB" x="0" y="0"/> </gates> <devices> <device name="" package="TO72"> <connects> <connect gate="G$1" pin="B" pad="4"/> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="VN66AF" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 60V; 2A; 3,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="-2.54" y="0"/> </gates> <devices> <device name="" package="TO202"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="VN88AF" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 80V; 2A; 3,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO202"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="LP0701N3" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> -16,5V; -1,25A; 1,5Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO-92"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="TN0604N3" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 40V; 4A; 0,75Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO-92"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="TP0602N3" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> -20V; -2A; 2,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO-92"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="TP0604N3" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> -40V; -2A; 2,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO-92"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="TP0602N2" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> -20V; -2A; 2,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO-39"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="TP0604N2" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> -40V; -2A; 2,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO-39"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="TN0602N2" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 20V; 4A; 0,85Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO-39"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="TN0602N3" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 20V; 4A; 0,75Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO-92"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="VN0106N9" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 60V; 0,5A; 3,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="-2.54"/> </gates> <devices> <device name="" package="TO-52"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2N4093" prefix="Q"> <description><b>N-Channel Junction FET</b></description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO18"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="IRF9530" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> (HEXFET); -100V; -12A; 0,3Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="VN10KM" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</B> (VMOS); 60V; 0,5A; 5,0Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO237"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="VN2222KM" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> (VMOS); 60V; 0,5A; 7,5Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO237"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="TN0604N2" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</B> 40V; 4A; 0,85Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO-39"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SUP75N06-08" prefix="Q"> <description><b>N-Channel Enhancement MOSFET</b> 60V; 75A; 0,008Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SUP65P06-20" prefix="Q"> <description><b>P-Channel Enhancement MOSFET</b> -60V; 60A; 0,020Ohm</description> <gates> <gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SPW47N60S5" prefix="Q"> <description><b>Cool MOS Power Transistor</b></description> <gates> <gate name="G$1" symbol="N-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="P-TO247"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="FDS5680" prefix="Q"> <description><b>60V N-Channel PowerTrench TM MOSFET</b><p> FAIRCHILD FDS5680.pdf</description> <gates> <gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="SO-8"> <connects> <connect gate="G$1" pin="D" pad="5 6 7 8"/> <connect gate="G$1" pin="G" pad="4"/> <connect gate="G$1" pin="S" pad="1 2 3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SI5902DC" prefix="Q"> <description><b>Dual N-Channel 30-V (D-S) MOSFET</b><p> Source: http://www.vishay.com/docs/71053/71053.pdf</description> <gates> <gate name="A" symbol="N-MOSFET-GDS-D" x="0" y="10.16"/> <gate name="B" symbol="N-MOSFET-GDS-D" x="0" y="-10.16"/> </gates> <devices> <device name="" package="1206-8CHIP-FET"> <connects> <connect gate="A" pin="D" pad="7 8"/> <connect gate="A" pin="G" pad="2"/> <connect gate="A" pin="S" pad="1"/> <connect gate="B" pin="D" pad="5 6"/> <connect gate="B" pin="G" pad="4"/> <connect gate="B" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="?20*" prefix="Q"> <description><b>TEMIC / Siliconix N-Channel JFET</b><p> Source: JFET-J201_Siliconix_data.pdf</description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="J" package="TO92"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name="1"/> <technology name="2"/> <technology name="4"/> </technologies> </device> <device name="SST" package="SOT23"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name="1"/> <technology name="2"/> <technology name="4"/> </technologies> </device> </devices> </deviceset> <deviceset name="3N2*" prefix="Q"> <description><b>Motorola DUAL-GATE MOSFET VHF AMPLIFIER<p> Source: 3N203[1].pdf</description> <gates> <gate name="G$1" symbol="DUAL-GATE-N_MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="TO72"> <connects> <connect gate="G$1" pin="DRAIN" pad="1"/> <connect gate="G$1" pin="G1" pad="3"/> <connect gate="G$1" pin="G2" pad="2"/> <connect gate="G$1" pin="SOURCE" pad="4"/> </connects> <technologies> <technology name="01"/> <technology name="02"/> <technology name="03"/> <technology name="11"/> <technology name="12"/> <technology name="13"/> </technologies> </device> </devices> </deviceset> <deviceset name="3SK45" prefix="Q"> <description><b>HITACHI DUAL GATE N-MOSFET</b> VHF TV/FM Tuner RF Amplifier, Mixer<p> up to 200 MHz<br> Source: 3SK45.pdf</description> <gates> <gate name="G$1" symbol="DUAL-GATE-N_MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="TO72"> <connects> <connect gate="G$1" pin="DRAIN" pad="1"/> <connect gate="G$1" pin="G1" pad="3"/> <connect gate="G$1" pin="G2" pad="2"/> <connect gate="G$1" pin="SOURCE" pad="4"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="RCA3N187" prefix="Q"> <description><b>DUAL GATE N MOSFET Depletion Type</b> up to 300MHz<p> Source: RCA3N187[1].pdf</description> <gates> <gate name="G$1" symbol="DUAL-GATE-N_MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="TO72"> <connects> <connect gate="G$1" pin="DRAIN" pad="1"/> <connect gate="G$1" pin="G1" pad="3"/> <connect gate="G$1" pin="G2" pad="2"/> <connect gate="G$1" pin="SOURCE" pad="4"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="RCA40673" prefix="Q"> <description><b>DUAL GATE N MOSFET Depletion Type</b> RF Amplifier up to 400MHz<p> Source: RCA40673.pdf</description> <gates> <gate name="G$1" symbol="DUAL-GATE-N_MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="TO72"> <connects> <connect gate="G$1" pin="DRAIN" pad="1"/> <connect gate="G$1" pin="G1" pad="3"/> <connect gate="G$1" pin="G2" pad="2"/> <connect gate="G$1" pin="SOURCE" pad="4"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="MRF136" prefix="Q"> <description><b>RF Power Field-Effect Transistor</b> N-Channel Enhancement-Mode MOSFET, 15W, 400MHz<p> Sopurce: http://www.macom.com/data/datasheet/MRF136.pdf</description> <gates> <gate name="G$1" symbol="N-MOSFET-GDS" x="0" y="0"/> </gates> <devices> <device name="" package="211-07_SMD"> <connects> <connect gate="G$1" pin="D" pad="4"/> <connect gate="G$1" pin="G" pad="2"/> <connect gate="G$1" pin="S" pad="1 3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SPP80P06P" prefix="Q"> <description><b>SIPMOS(R) Power-Transistor</b> P-Channel, Enhancement mode<p> Source: http://www.infineon.com/upload/Document/cmc_upload/documents/012/3619/SPP80P06P.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="TO220"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SPD30P06P" prefix="Q"> <description><b>SIPMOS(R) Power-Transistor</b> P-Channel, Enhancement mode<p> Source: http://www.infineon.com/upload/Document/cmc_upload/documents/012/3615/SPD_U30P06P.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="TO252" package="TO252"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> <device name="" package="TO251AA"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SPB80P06P" prefix="Q"> <description><b>SIPMOS (R) Power-Transistor</b> P-Channel, Enhancement mode<p> Source: http://www.infineon.com/upload/Document/cmc_upload/documents/011/3685/SPP80P06P.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="TO263"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BSP170P" prefix="Q"> <description><b>SIPMOS(R) Small-Signal-Transistor</b> P-Channel, Enhancement mode<p> Source: http://www.infineon.com/upload/Document/BSP170P_Rev2.4.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="SOT223"> <connects> <connect gate="G$1" pin="D" pad="2 4"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BSA223SP" prefix="Q"> <description><b>OptiMOS(R)-P Small-Signal-Transistor</b> P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)<p> Source: http://www.infineon.com/upload/Document/BSA223SP_Rev1.3.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="SC75_INFINEON"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BSD223P" prefix="Q"> <description><b>OptiMOS(R)-P Small-Signal-Transistor</b> Dual P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)<p> Source: http://www.infineon.com/upload/Document/BSD223P_Rev1.3.pdf</description> <gates> <gate name="A" symbol="P-MOSFET" x="0" y="7.62"/> <gate name="B" symbol="P-MOSFET" x="0" y="-7.62"/> </gates> <devices> <device name="" package="SOT363_INFINEON"> <connects> <connect gate="A" pin="D" pad="6"/> <connect gate="A" pin="G" pad="2"/> <connect gate="A" pin="S" pad="1"/> <connect gate="B" pin="D" pad="3"/> <connect gate="B" pin="G" pad="5"/> <connect gate="B" pin="S" pad="4"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BSV236SP" prefix="Q"> <description><b>OptiMOS(R)-P Small-Signal-Transistor</b> P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)<p> Source: http://www.infineon.com/upload/Document/BSV236SP_Rev1.3.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="SOT363_INFINEON"> <connects> <connect gate="G$1" pin="D" pad="1 2 5 6"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="4"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BSL207SP" prefix="Q"> <description><b>OptiMOS(R)-P Small-Signal-Transistor</b> P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)<p> Source: http://www.infineon.com/upload/Document/BSL207SP_Rev2.01.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="SC74_INFINEON"> <connects> <connect gate="G$1" pin="D" pad="1 2 5 6"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="4"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BSO201SP" prefix="Q"> <description><b>OptiMOS(R)-P Small-Signal-Transistor</b> P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)<p> RDS(on) 8mOhm, ID -14.9 a<br> Source: http://www.infineon.com/upload/Document/cmc_upload/documents/011/3655/BSO201SP_211201.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="SO-8"> <connects> <connect gate="G$1" pin="D" pad="5 6 7 8"/> <connect gate="G$1" pin="G" pad="4"/> <connect gate="G$1" pin="S" pad="1 2 3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BSL307SP" prefix="Q"> <description><b>OptiMOS(R)-P Small-Signal-Transistor</b> P-Channel, Enhancement mode, Logic Level<p> ID -5.5 A<br> Source: http://www.infineon.com/upload/Document/BSL307SP_Rev%201.2.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="SC74_INFINEON"> <connects> <connect gate="G$1" pin="D" pad="1 2 5 6"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="4"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="SPD50P03LG" prefix="Q"> <description><b>OPTIMOS®-P Small-Signal-Transistor</b> P-Channel, Enhancement mode, Logic level<p> RDS(on) 7 mOhm, ID -50A<br> Source: http://www.infineon.com/upload/Document/SPD50P03L%20G_Rev1.5.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="TO252-51"> <connects> <connect gate="G$1" pin="D" pad="5"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="3 4"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="IRF7389" prefix="Q"> <description><b>Complimentary Half Bridge</b> HEXFET Power MOSFET<p> Source: http://www.irf.com/product-info/datasheets/data/irf7389.pdf</description> <gates> <gate name="G$1" symbol="IRF7389" x="0" y="0"/> </gates> <devices> <device name="" package="SO08-IRF"> <connects> <connect gate="G$1" pin="D" pad="5 6 7 8"/> <connect gate="G$1" pin="N-G" pad="2"/> <connect gate="G$1" pin="N-S" pad="1"/> <connect gate="G$1" pin="P-G" pad="4"/> <connect gate="G$1" pin="P-S" pad="3"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BF960" prefix="Q"> <description><b>N-CHANNEL Dual Gate MOS-Fieleffect</b> Tetrode - Depletion Mode<p> Source: Telefunken Electronic BF960.pdf</description> <gates> <gate name="G$1" symbol="DUAL-GATE-N_MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="TO50"> <connects> <connect gate="G$1" pin="DRAIN" pad="1-D"/> <connect gate="G$1" pin="G1" pad="3-G1"/> <connect gate="G$1" pin="G2" pad="4-G2"/> <connect gate="G$1" pin="SOURCE" pad="2-S"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BF961" prefix="Q"> <description><b>N-Channel Dual Gate MOS-Fieldeffect Tetrode</b>, Depletion Mode, up to 300 MHz<p> Source: TEMIC Semiconductors - BF691.pdf</description> <gates> <gate name="G$1" symbol="DUAL-GATE-N_MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="TO50"> <connects> <connect gate="G$1" pin="DRAIN" pad="1-D"/> <connect gate="G$1" pin="G1" pad="3-G1"/> <connect gate="G$1" pin="G2" pad="4-G2"/> <connect gate="G$1" pin="SOURCE" pad="2-S"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="BF98*" prefix="Q"> <description><b>N-CHANNEL Dual Gate MOS-FET</b><p> Source: BF981.pdf</description> <gates> <gate name="G$1" symbol="DUAL-GATE-N_MOSFET" x="0" y="0"/> </gates> <devices> <device name="" package="SOT103"> <connects> <connect gate="G$1" pin="DRAIN" pad="2-D"/> <connect gate="G$1" pin="G1" pad="4-G1"/> <connect gate="G$1" pin="G2" pad="3-G2"/> <connect gate="G$1" pin="SOURCE" pad="1-S"/> </connects> <technologies> <technology name="1"/> <technology name="2"/> </technologies> </device> </devices> </deviceset> <deviceset name="?548*" prefix="Q"> <description><b>N-Channel JFETs</b><p> Source: VISHAY 2N5484.pdf<p> Compatible:<br> <b>TO92</b><br> 2N5245<br> J304<br> J305<br> U310<br> J308<br> J309<br> J310<br> <b>TO72</b><br> 2N4416<br> 2N4416A<br> 2N3823<br> 2N4351<br> 3N169<br> 3N170<br> 3N171<br> MFE3002<br> <b>TO18</b><br> 2N3796<br> 2N3797<br> MFE825<br> Source: Motorola European Master Guide Pacge 3-59</description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="2N" package="TO92-"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name="4"/> <technology name="5"/> <technology name="6"/> </technologies> </device> <device name="SST" package="SOT23"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name="4"/> <technology name="5"/> <technology name="6"/> </technologies> </device> </devices> </deviceset> <deviceset name="2SK241" prefix="Q"> <description><b>SILICON N CHANNEL MOS TYPE</b><p> THOSHIBA FILED EFFEKT TRANSISTOR<br></description> <gates> <gate name="G$1" symbol="2SK241" x="0" y="0"/> </gates> <devices> <device name="" package="2SK241"> <connects> <connect gate="G$1" pin="D" pad="1"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2SK439" prefix="Q"> <description><b>Silicon N-Channel MOS FET</b><p> Source: HITACHI .. 2SK439.pdf</description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="SPAK"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2N5950" prefix="Q"> <description><b>N-Channel JFET RF Amplifier</b></description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO-92"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="FDD4141" prefix="Q"> <description><b>P-Channel PowerTrench® MOSFET</b><p> Source: FDD4141.pdf</description> <gates> <gate name="G$1" symbol="P-MOSFET" x="0" y="0"/> </gates> <devices> <device name="TO252" package="TO252"> <connects> <connect gate="G$1" pin="D" pad="3"/> <connect gate="G$1" pin="G" pad="1"/> <connect gate="G$1" pin="S" pad="2"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2SK389" prefix="Q"> <description><b>DUAL FIELD EFFECT TRANSISTOR</b> SILICON MONOLITHIC N CHANNEL JUNCTION TYPE<p> Source: http://pdf1.alldatasheet.com/datasheet-pdf/view/30769/TOSHIBA/2SK389.html</description> <gates> <gate name="A" symbol="JFET_N" x="-7.62" y="0"/> <gate name="B" symbol="JFET_N" x="7.62" y="0"/> </gates> <devices> <device name="" package="2-10M1A"> <connects> <connect gate="A" pin="D" pad="1"/> <connect gate="A" pin="G" pad="2"/> <connect gate="A" pin="S" pad="3"/> <connect gate="B" pin="D" pad="7"/> <connect gate="B" pin="G" pad="6"/> <connect gate="B" pin="S" pad="5"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2SJ109" prefix="Q"> <description><b>DUAL FIELD EFFECT TRANSISTOR</b> SILICON MONOLITHIC P CHANNEL JUNCTION TYPE<p> Source:http://www.datasheetcatalog.org/datasheets/270/201785_DS.pdf</description> <gates> <gate name="A" symbol="JFET_P" x="-7.62" y="0"/> <gate name="B" symbol="JFET_P" x="7.62" y="0"/> </gates> <devices> <device name="" package="2-10M1A"> <connects> <connect gate="A" pin="D" pad="1"/> <connect gate="A" pin="G" pad="2"/> <connect gate="A" pin="S" pad="3"/> <connect gate="B" pin="D" pad="7"/> <connect gate="B" pin="G" pad="6"/> <connect gate="B" pin="S" pad="5"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> <deviceset name="2N4416" prefix="Q"> <description><b>N-Channel JFET</b><p> Source: www.vishay.com</description> <gates> <gate name="G$1" symbol="JFET-N" x="0" y="0"/> </gates> <devices> <device name="" package="TO72"> <connects> <connect gate="G$1" pin="D" pad="2"/> <connect gate="G$1" pin="G" pad="3"/> <connect gate="G$1" pin="S" pad="1"/> </connects> <technologies> <technology name=""/> </technologies> </device> </devices> </deviceset> </devicesets> </library> </drawing> </eagle>